Semiconductor device and method of manufacturing the same

ABSTRACT

A method of manufacturing a semiconductor device including a complementary metal oxide semiconductor (CMOS) and a bipolar junction transistor (BJT), the method comprising the steps of: forming a gate oxide layer on a substrate having a p-type and an n-type well; removing the gate oxide layer on the p-type well; forming bases on the p-type well; forming a first photosensitive layer pattern that exposes the bases on the substrate; implanting p-type impurity ions into the bases through the first photosensitive layer pattern; removing the first photosensitive layer pattern; forming a second photosensitive layer pattern that exposes the p-type and the n-type wells; and implanting n-type impurity ions into the p-type and the n-type wells through the second photosensitive layer pattern to form an emitter and a collector, respectively, to form the BJT. Therefore, CMOS manufacturing processes are used to form a high frequency BJT having improved frequency and noise characteristics.

RELATED APPLICATION

This application claims the benefit of priority to Korean patentapplication number 10-2005-0131518, filed on Dec. 28, 2005, which isincorporated herein by reference in its entirety.

BACKGROUND

1. Technical Field

The present invention relates to a semiconductor device and a method ofmanufacturing the same.

2. Description of the Related Art

A complementary metal oxide semiconductor (CMOS) device typically has anexcellent frequency response characteristic; however, the noisecharacteristic and the power gain characteristic thereof are inferior tothose of a compound semiconductor device at high frequencies. Inparticular, as the semiconductor device is reduced in size, the serialresistance, the primary contributing factor of the noise characteristic,of a gate electrode increases accordingly such that the noisecharacteristic deteriorates. Therefore, a bipolar junction transistor(hereinafter referred to as BJT) having an excellent noisecharacteristic is formed in a specific portion of a CMOS semiconductordevice.

However, since a high frequency BJT is formed by a polysilicon emitterprocess using about four to five additional masks, the manufacturingprocesses of the CMOS semiconductor device are complicated. Also, whenthe high frequency BJT is formed in the CMOS semiconductor device, thefrequency characteristic of the CMOS semiconductor device deterioratesdue to the BJT having a poor frequency characteristic.

SUMMARY

Embodiments consistent with the present invention provide asemiconductor device having improved frequency and noise characteristicsby using manufacturing processes of a complementary metal oxidesemiconductor (CMOS) device.

Consistent with an embodiment of the present invention, there isprovided a method of manufacturing a semiconductor device including acomplementary metal oxide semiconductor (CMOS) and a bipolar junctiontransistor (BJT), the method including the steps of forming a gate oxidelayer on a semiconductor substrate in which a p-type well and an n-typewell are formed; removing the gate oxide layer on the p-type well;forming bases made of polysilicon on the p-type well; forming a firstphotosensitive layer pattern that exposes the bases on the semiconductorsubstrate; implanting p-type impurity ions into the bases through thefirst photosensitive layer pattern; removing the first photosensitivelayer pattern; forming a second photosensitive layer pattern that exposethe p-type well and the n-type well on the bases and the semiconductorsubstrate; and implanting n-type impurity ions into the p-type well andthe n-type well through the second photosensitive layer pattern to forman emitter and a collector, respectively, to form the BJT.

Consistent with another embodiment of the present invention, there isprovided a semiconductor device including a semiconductor substrateincluding a p-type well in which an emitter is formed and an n-type wellin which a collector is formed; bases formed on the p-type well; aninsulating layer formed on the bases and the semiconductor substrate;and an emitter contact, base contacts, and a collector contact forfilling contact holes formed in the insulating layer to be connected tothe emitter, the bases, and the collector, respectively.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention willbecome apparent from the following description of embodiments given inconjunction with the accompanying drawings.

FIG. 1 illustrates a semiconductor device consistent with an embodimentof the present invention; and

FIGS. 2 to 6 illustrate a method of manufacturing the semiconductordevice consistent with an embodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings so thatthey can be readily implemented by those skilled in the art. The presentinvention may, however, be embodied in many different forms and shouldnot be construed as being limited to the embodiments set forth herein.

In the drawings, the thickness of layers and regions are exaggerated forclarity. The same reference numerals in different drawings represent thesame element. It will also be understood that when a layer is referredto as being “on” another layer, film, region, or substrate, it can be“directly on” the other layer, film, region, or substrate, orintervening layers may also be present. On the other hand, when a layeris referred to as being “directly on” another layer, film, region, orsubstrate, it means that there are no intervening layers.

A semiconductor device and a method of manufacturing the same consistentwith an embodiment of the present invention will be described withreference to the attached drawings.

FIG. 1 is a sectional view of a semiconductor device consistent with anembodiment of the present invention.

As illustrated in FIG. 1, the semiconductor device is formed on asemiconductor substrate 100 where a complementary metal oxidesemiconductor (CMOS) device is formed. A p-type well 102 and an n-typewell 101 are formed in the semiconductor substrate 100. Then, an emitter107 is formed in the p-type well 102 and a collector 106 is formed inthe n-type well 101. N-type impurity ions are then implanted intoemitter 107 and collector 106.

A plurality of bases 132 made of polysilicon are then formed on p-typewell 102 on both sides of emitter 107. P-type impurity ions are thenimplanted into bases 132.

An insulating layer 160 is then formed on the bases 132 and thesemiconductor substrate 100. Silicides 151 are then formed on emitter107, bases 132, and collector 106.

Contact holes 160 a, 160 b, and 160 c that expose silicides 151 areformed in the insulating layer 160. And then, a collector contact 171,base contacts 173, and an emitter contact 172 are formed to fillrespective contact holes 160 a, 160 b, and 160 c formed in theinsulating layer 160. Emitter 107, bases 132, and collector 106constitute a bipolar junction transistor (BJT).

FIGS. 2 to 6 illustrate a method of manufacturing the semiconductordevice consistent with an embodiment of the present invention.

As illustrated in FIG. 2, a gate oxide layer 121 is formed onsemiconductor substrate 100 having n-type well 101, p-type well 102, anddevice isolation regions 105 for isolating n-type well 101 and p-typewell 102 from each other formed therein.

Then, a portion of gate oxide layer 121 on p-type well 102 is removedusing a gate oxide layer removing mask (not shown) to expose a portionof p-type well 102. The gate oxide layer removing mask removes only theportion of gate oxide layer 121 on p-type well 102 in the region wherethe BJT will be formed.

Then, as illustrated in FIG. 3, bases 132 formed of polysilicon areformed on the exposed portion of p-type well 102. Simultaneously, thegate electrode (not shown) of the CMOS is also formed. Then, side wallspacers 141 are formed on the side walls of bases 132.

Thereafter, as illustrated in FIG. 4, a first photosensitive layerpattern 200 is formed on the bases 132 and semiconductor substrate 100,exposing the top surfaces of bases 132. Then, p-type impurity ions areimplanted into bases 132 through first photosensitive layer pattern 200.Therefore, p-type bases 132 are formed. Furthermore, the source anddrain regions (not shown) of a PMOS in the CMOS are also formed. Sincegate oxide layer 121 does not exist under p-type base 132, p-type bases132 and p-type well 102 are electrically connected to each other. Then,first photosensitive layer pattern 200 is removed.

In sequence, as illustrated in FIG. 5, a second photosensitive layerpattern 300 is formed on bases 132 and the semiconductor substrate 100,exposing p-type well 102 and n-type well 101. And then, the n-typeimpurity ions are implanted into p-type well 102 and n-type well 101through second photosensitive layer pattern 300. Therefore, n-typeemitter 107 is formed in p-type well 102 and n-type collector 106 isformed in n-type well 101. Furthermore, the source and drain regions(not shown) of an NMOS in the CMOS are also formed.

Then, second photosensitive layer pattern 300 is removed. In thisembodiment, since bases 132 and emitter 107 are aligned with each otherby side wall spacers 141, it is possible to maintain a uniform distancebetween bases 132 and emitter 107.

As illustrated in FIG. 6, silicides 151 are formed on bases 132, emitter107, and collector 106, sequentially, and insulating layer 160 made ofan oxide layer is formed on the resultant layer. Further, silicides (notshown) are formed on the gate electrode and the source and drain regionsof the CMOS.

Thereafter, as illustrated in FIG. 1, contact holes 160 a, 160 b, and160 c that expose silicides 151 are formed in insulating layer 160. Andthen, contact holes 160 a, 160 b, and 160 c are filled with metal layers(base contacts 173, emitter contact 172, and collector contact 171,respectively) that are connected to bases 132, emitter 107, andcollector 106, respectively, to form the BJT.

As described above, in the method of manufacturing the semiconductordevice consistent with the present invention, a process of formingn-type well 101 and a process of forming the mask for removing gateoxide layer 121 formed on p-type well 102 are included in the CMOSmanufacturing processes, which leads to the formation of a highfrequency BJT. Thus, the manufacturing processes are simplified.

Also, since bases 132 and emitter 107 in the BJT are aligned such thatthe distance between bases 132 and emitter 107 is uniform, it ispossible to prevent current from becoming unbalanced, thus improvingdevice characteristics.

Also, since p-type base 132 is formed of polysilicon and gate oxidelayer 121 does not exist under p-type base 132, it is possible to reduceserial resistance between p-type bases 132 and emitter 107. Therefore,the base resistance that determines the high frequency characteristic isreduced such that the frequency and noise characteristics of the deviceare improved.

In the semiconductor device and the method of manufacturing the sameconsistent with the present invention, the CMOS manufacturing processesare used to form the high frequency BJT, thereby improving the frequencyand noise characteristics.

While the invention has been shown and described with respect to severalembodiments, it will be understood by those skilled in the art thatvarious changes and modifications may be made without departing from thespirit and scope of the invention as defined in the following claims.

1-5. (canceled)
 6. A semiconductor device, comprising: a substrateincluding a p-type well in which an emitter is formed and an n-type wellin which a collector is formed; bases formed on the p-type well; aninsulating layer formed on the bases and the substrate; contact holesformed in the insulating layer on the emitter, the bases, and thecollector; and an emitter contact, base contacts, and a collectorcontact, connected to the emitter, the bases, and the collector,respectively, and filling the respective contact holes.
 7. Thesemiconductor device of claim 6, wherein the bases into which p-typeimpurity ions are implanted are formed of polysilicon.
 8. Thesemiconductor device of claim 6, wherein n-type impurity ions areimplanted into the emitter and the collector.
 9. The semiconductordevice of claim 6, wherein the bases and the p-type well areelectrically connected to each other.
 10. The semiconductor device ofclaim 6, wherein the bases are formed directly on the p-type well. 11.The semiconductor device of claim 6, wherein the emitter is formedbetween two adjacent bases.
 12. The semiconductor device of claim 6,further including side wall spacers formed on side walls of each of thebases.
 13. A semiconductor device comprising: a complementary metaloxide semiconductor (CMOS); and a bipolar junction transistor (BJT),wherein the bipolar junction transistor comprises: a substrate includinga p-type well in which an emitter is formed and an n-type well in whicha collector is formed; a plurality of bases formed on the p-type well;an insulating layer formed on the bases and the substrate; contact holesformed in the insulating layer on the emitter, the bases, and thecollector; and an emitter contact, base contacts, and a collectorcontact, respectively connected to the emitter, the bases, and thecollector, and filing the respective contact holes.
 14. Thesemiconductor device of claim 13, wherein the bases into which p-typeimpurity ions are implanted are formed of polysilicon.
 15. Thesemiconductor device of claim 13, wherein n-type impurity ions areimplanted into the emitter and the collector.
 16. The semiconductordevice of claim 13, wherein the bases and the p-type well areelectrically connected to each other.
 17. The semiconductor device ofclaim 13, wherein the bases are formed directly on the p-type well. 18.The semiconductor device of claim 13, wherein the emitter is formedbetween two adjacent bases.
 19. The semiconductor device of claim 13,wherein the bipolar junction transistor further includes side wallspacers formed on side walls of each of the bases.